Product: Silicon Carbide Wafers

Silicon carbide (SiC) substrate is a wide band gap semiconductor material having circular structure (2-4” dia). The crystal growth of SiC is extremely difficult and therefore only few countries have mastered the SiC crystal growth & wafer fabrication technology. At SSPL, Delhi (in collaboration with DMRL, Hyderabad) the complete growth and wafer fabrication process of SiC has been developed indigenously.

• Application of the Product : Silicon Carbide has huge applications in the strategic as well as civil sectors viz. radio frequency microwave devices, power electronic devices, solar-blind UV photodetectors, blue-green lasers, 5G technology, electric vehicles, energy harvesting etc.